Druckansicht der Internetadresse:

Fakultät für Ingenieurwissenschaften

Lehrstuhl Mechatronik – Prof. Dr.-Ing. Mark-M. Bakran

Seite drucken

Team > Dipl.-Ing. Teresa Bertelshofer

zurück zur Übersicht
zurück zur Übersicht
Dipl.-Ing. Teresa Bertelshofer

Fakultät für Ingenieurwissenschaften
Lehrstuhl für Mechatronik


Forschung

Einsatz von Wide-Bandgap-Halbleitern in automobilen Antriebsumrichtern



Themen

  • Evaluation neuartiger Leistungshalbleitern zum Einsatz in automobilen Antriebsumrichtern
  • Parallelschaltung diskreter SiC/GaN Bauelemente

Fakultät für Ingenieurwissenschaften
Lehrstuhl für Mechatronik


Publikationen

2019

Bakran, Mark-M.; Gleißner, Michael; Bertelshofer, Teresa
Batterien und elektrische Antriebe : Systembetrachtungen für die Elektromobilität
In: Spektrum Bd. 15 (2019) Heft 1. - S. 42-46
https://www.uni-bayreuth.de/de/universitaet/presse ...

Bertelshofer, Teresa; Denk, Marco; Bakran, Mark-M.
Design Study and Prototype of 150kW Inverter with Discrete SiC MOSFETs
2019
PCIM Europe 2019, Nürnberg

Bertelshofer, Teresa; März, Andreas; Bakran, Mark-M.
Modelling parallel SiC MOSFETs : thermal selfstabilisation vs. switching imbalances
In: IET Power Electronics Bd. 12 (2019) Heft 5. - S. 1071-1078
doi:10.1049/iet-pel.2018.5418 ...

2018

Gleißner, Michael; Bertelshofer, Teresa; Bakran, Mark-M.
Fault-Tolerant Active Neutral Point Clamped Inverter with SiC MOSFETs
2018
EEHE Electrics & Electronics Systems in Hybrid and Electric Vehicles and Electrical Energy Management, Würzburg

März, Andreas; Bertelshofer, Teresa; Helsper, Martin; Bakran, Mark-M.
Comparison of IGBT and SiC MOSFET in resonant application
2018
20th European Conference on Power Electronics and Applications, Riga, Lettland

Bertelshofer, Teresa; März, Andreas; Bakran, Mark-M.
Derating of parallel SiC MOSFETs considering switching imbalances
2018
PCIM Europe 2018, Nürnberg

Gleißner, Michael; Bertelshofer, Teresa; Bakran, Mark-M.
Driver integrated fault-tolerant reconfiguration after short-on failures of a SiC MOSFET ANPC i ...
2018
PCIM Europe 2018, Nürnberg

März, Andreas; Bertelshofer, Teresa; Bakran, Mark-M.
High dynamic stress on SiC trench MOSFET body diodes and their behaviour
2018
PCIM Europe 2018, Nürnberg

Bertelshofer, Teresa; März, Andreas; Bakran, Mark-M.
Limits of SiC MOSFETs' Parameter Deviations for Safe Parallel Operation
2018
20th European Conference on Power Electronics an Applications, Riga, Lettland

2017

März, Andreas; Bertelshofer, Teresa; Bakran, Mark-M.
Improving the performance of SiC trench MOSFETs under hard switching operation
2017
2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS), Honolulu, HI, USA

Bertelshofer, Teresa; März, Andreas; Bakran, Mark-M.
A Temperature Compensated Overcurrent and Short-Circuit Detection Method for SiC MOSFET Modules
2017
EPE 2017 ECCE Europe : 19th European Conference on Power Electronics and Applications, Warschau, Polen

März, Andreas; Bertelshofer, Teresa; Helsper, Martin; Bakran, Mark-M.
Comparison of SiC MOSFET gate-drive concepts to suppress parasitic turn-on in low inductance po ...
2017
EPE 2017 ECCE Europe : 19th European Conference on Power Electronics and Applications, Warschau, Polen

Bertelshofer, Teresa; März, Andreas; Bakran, Mark-M.
Design Rules to Adapt the Desaturation Detection for SiC MOSFET Modules
2017
PCIM Europe 2017, Nürnberg, Deutschland

März, Andreas; Bertelshofer, Teresa; Bakran, Mark-M.
A novel gate drive concept to eliminate Parasitic Turn-on of SiC MOSFETs in low inductance powe ...
2017
PCIM Europe 2017, Nürnberg, Deutschland

2016

März, Andreas; Bertelshofer, Teresa; Horff, Roman; Helsper, Martin; Bakran, Mark-M.
Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-l ...
Power Electronics and Applications (EPE'16 ECCE Europe), 2016 18th European Conference on
Piscataway, New Jersey : IEEE Xplore, 2016
doi:10.1109/EPE.2016.7695287 ...

März, Andreas; Bertelshofer, Teresa; Horff, Roman; Bakran, Mark-M.
Requirements of short-circuit detection methods and turn off for wide band gap semiconductors
ETG-Fb 148: CIPS 2016 : 9th International Conference on Integrated Power Electronics Systems, Proceedings March, 8 – 10, 2016, Nuremberg/Germany
Berlin : VDE-Verlag, 2016
http://ieeexplore.ieee.org/document/7736702/

März, Andreas; Horff, Roman; Bertelshofer, Teresa; Bakran, Mark-M.; Helsper, Martin
Benchmarking of SiC JFET and SiC MOSFET Modules for the Application in Medium Power Traction Co ...
2016
PCIM Europe 2016, Nürnberg

Horff, Roman; Bertelshofer, Teresa; März, Andreas; Bakran, Mark-M.
Current Measurement and Gate-Resistance Mismatch in Paralleled Phases of High Power SiC MOSFET ...
2016
PCIM Europe 2016, Nürnberg

Horff, Roman; Bertelshofer, Teresa; März, Andreas; Bakran, Mark-M.
Current mismatch in paralleled phases of high power SiC modules due to threshold voltage unsymm ...
2016
doi:10.1109/EPE.2016.7695409 ...
EPE 2016 ECCE Europe : 18th European Conference on Power Electronics and Applications, Karlsruhe

Bertelshofer, Teresa; Horff, Roman; März, Andreas; Bakran, Mark-M.
A Performance Comparison of a 650 V Si IGBT and SiC MOSFET Inverter under Automotive Conditions
2016
PCIM Europe 2016, Nürnberg

März, Andreas; Bertelshofer, Teresa; Bakran, Mark-M.
A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditi ...
In: Active and Passive Electronic Components (2016)
doi:10.1155/2016/9414901 ...

2014

Bertelshofer, Teresa
Nachstellung der Betriebsbelastungen eines Leistungshalbleitermoduls zur Validierung eines IGBT ...
2014
(Diplomarbeit, , )

Fakultät für Ingenieurwissenschaften
Lehrstuhl für Mechatronik


Dipl.-Ing. Teresa Bertelshofer
Wissenschaftliche Mitarbeiterin

Google Scholar: Veröffentlichungen
ResearchGate: Veröffentlichungen

Verantwortlich für die Redaktion: Christine Schmidt

Facebook Twitter Youtube-Kanal Instagram UBT-A Kontakt